Title :
Development and evaluation of AuSi eutectic wafer bonding
Author :
Lin, Y.-C. ; Baum, M. ; Haubold, M. ; Frömel, J. ; Wiemer, M. ; Gessner, T. ; Esashi, M.
Author_Institution :
WPI Adv. Inst. for Mater. Res., Tohoku Univ., Sendai, Japan
Abstract :
In this paper, wafer-to-wafer AuSi eutectic bonding was investigated and evaluated with various sets of experimental parameters. Single crystalline Si and amorphous Si were bonded with different dimension Au layers and observed by optical measurements. Material composition, adhesion layer, electrical insulation, bonding parameters, and surface pre-treatments were discussed and have improved bonding performance. Bond strength determined by micro-chevron-test and shear test was evaluated as well as hermeticity. High bond yield was achieved with 4 inch and 6 inch wafer stacks.
Keywords :
adhesive bonding; amorphous semiconductors; elemental semiconductors; eutectic alloys; gold alloys; insulation; integrated circuit bonding; mechanical strength; silicon alloys; wafer bonding; wafer-scale integration; AuSi; adhesion layer; amorphous silicon; bond strength; bonding parameters; electrical insulation; hermeticity; material composition; microchevron-test; optical measurements; shear test; single crystalline silicon; size 4 inch; size 6 inch; wafer-to-wafer eutectic bonding; Adhesives; Amorphous materials; Composite materials; Crystalline materials; Crystallization; Dielectrics and electrical insulation; Gold; Optical materials; Testing; Wafer bonding; AuSi eutectic; integration technology; wafer level bonding;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
DOI :
10.1109/SENSOR.2009.5285519
