Title :
Cascade tunnel diode incorporating InAs/GaSb broken gap interface for multi-junction solar cells
Author :
Lim, Swee H. ; Allen, Charles R. ; Ding, Ding ; Liu, Xinyu ; Furdyna, Jacek K. ; Vasileska, Dragica ; Zhang, Yong-Hang
Author_Institution :
Center for Photonics Innovation & Sch. of Electr., Arizona State Univ., Tempe, AZ, USA
Abstract :
We investigate the interface of InAs/GaSb as a device structure to enhance tunneling between subcells in multi-junction solar cells. Simulation is performed to study the conduction and valence band profile at the interfaces and determine the size of the tunneling barriers for charge carriers. An InAs/GaSb tunnel diode is also grown and fabricated. The conduction properties of this tunnel diode show good ohmic behavior and low contact resistance.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; semiconductor growth; solar cells; tunnel diodes; InAs-GaSb; broken gap interface; cascade tunnel diode; charge carriers; multijunction solar cells; valence band profile; Charge carrier processes; Junctions; Materials; Photovoltaic cells; Resistance; Semiconductor diodes; Tunneling;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6185893
