Aspect ratio dependent etch modulation for CMOS-MEMS applications

Author

Gilgunn, P.J. ; Alfaro, J.F. ; Fedder, G.K.

Author_Institution

Electr. & Comput. Eng. Dept, Carnegie Mellon Univ., Pittsburgh, PA, USA

fYear

2009

fDate

21-25 June 2009

Firstpage

216

Lastpage

219

Abstract

A unified, semi-empirical model of etch depth for a Bosch-type, inductively coupled plasma (ICP), silicon deep reactive ion etch (DRIE) process is reported. Aspect ratio dependent etch modulation (ARDEM) is modeled using Coburn and Winters´ approach with Dushman´s approximation of the vacuum conductance correction factor. The use of microdonut test structures to extract model parameters is described. The model is accurate to within 9% for an open-field depth of 150 mum on microdonut test structures. An application of ARDEM in the processing of CMOS-MEMS devices is presented.

Keywords

CMOS integrated circuits; elemental semiconductors; etching; micromechanical devices; silicon; CMOS-MEMS applications; Coburn approach; Dushman approximation; Si; Winters approach; aspect ratio dependent etch modulation; deep reactive ion etch process; inductively coupled plasma; microdonut test structures; size 150 mum; Application software; Etching; Microstructure; Plasma applications; Robots; Semiconductor device modeling; Silicon; Surface treatment; Systems engineering and theory; Testing; ARDEM; CMOS-MEMS; DRIE; microdonut; model;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Conference_Location

Denver, CO

Print_ISBN

978-1-4244-4190-7

Electronic_ISBN

978-1-4244-4193-8

Type

conf

DOI

10.1109/SENSOR.2009.5285524

Filename

5285524