Title :
Fabrication of nanoperforated silicon membranes with tunable sized high aspect ratio holes
Author :
Sainiemi, L. ; Viheriälä, J. ; Laukkanen, J. ; Niemi, T. ; Franssila, S.
Author_Institution :
Dept. of Micro & Nanosci., Helsinki Univ. of Technol., Espoo, Finland
Abstract :
We present a fabrication process for free-standing, nanoperforated membranes which are made of single-crystalline silicon. The membranes are fabricated out of silicon-on-insulator wafers. The mask for nanoperforations is patterned on the device layer side of the wafer using nanoimprint lithography. The membrane is released by etching through the handle wafer and the buried oxide layer from the backside of the wafer. The nanoperforations are created by the final cryogenic deep reactive ion etching step through the device layer. The process circumvents problems related to notching effect. As the last process step, narrowing of the pores is done by conformal atomic layer deposition of aluminum oxide. The thickness of the membrane is 3 mum and pore diameters of 200 nm and 420 nm are demonstrated.
Keywords :
aluminium compounds; atomic layer deposition; masks; nanofabrication; nanolithography; nanoporous materials; silicon; soft lithography; sputter etching; Al2O3; Si; aluminum oxide; conformal atomic layer deposition; cryogenic deep reactive ion etching step; nanoimprint lithography; nanoperforated silicon membrane fabrication; notching effect; silicon-on-insulator wafers; single-crystalline silicon; size 200 nm; size 3 mum; size 420 nm; tunable sized high aspect ratio holes; Atomic layer deposition; Biomembranes; Cryogenics; Etching; Nanolithography; Nanopatterning; Nanoscale devices; Optical device fabrication; Resists; Silicon on insulator technology; Deep reactive ion etching; filter; membrane; nanoimprint lithography;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
DOI :
10.1109/SENSOR.2009.5285528