SOI Hall effect sensor operating up to 270°C

Author

Portmann, Lionel ; Ballan, Hussein ; Declercq, Michel

Author_Institution

Swiss Fed. Inst. of Technol., Lausanne, Switzerland

fYear

2002

fDate

2002

Firstpage

269

Lastpage

272

Abstract

The design of a 5 Volts fully integrated magnetic sensor able to operate up to 270°C is presented. Fabricated in a Partially Depleted (PD) 1 μm SOI process, this monolithic sensor comprises a resistive Hall plate, an amplifier stage and an A/D converter delivering a temperature stabilized 8-bit digital readout of the magnetic field. This circuit uses analog techniques for continuous compensation of temperature. Design issues inherent to partially depleted SOI, as well as constraints due to high temperature, are discussed.

Keywords

CMOS integrated circuits; Hall effect transducers; compensation; digital readout; high-temperature electronics; magnetic field measurement; magnetic sensors; mixed analogue-digital integrated circuits; silicon-on-insulator; 1 micron; 270 C; 5 V; A/D converter; HV-MOS; SOI Hall effect sensor; amplifier stage; analog techniques; continuous temperature compensation; fully integrated magnetic sensor; magnetic field sensing; monolithic sensor; partially depleted SOI process; resistive Hall plate; temperature stabilized 8-bit digital readout; Aerospace industry; Automotive engineering; Circuits; Hall effect; Hall effect devices; Magnetic sensors; Silicon; Temperature sensors; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2002. Proceedings of the IEEE 2002

Print_ISBN

0-7803-7250-6

Type

conf

DOI

10.1109/CICC.2002.1012811

Filename

1012811