Title :
The effect of device geometry on the static and dynamic response of carbon nanotube field effect transistors
Author :
Pourfath, M. ; Kosina, H. ; Cheong, B.H. ; Park, W.J. ; Selberherr, S.
Author_Institution :
Inst. of Microelectron., Vienna, Austria
Abstract :
A numerical study of ohmic contact carbon nanotube field effect transistors is presented. The effect of the gate-source and gate-drain spacers on the static and dynamic response of the device was studied. Simulation results suggest that by appropriately selecting the gate-source and gate-drain spacers both the dynamic and static characteristics of the device are improved.
Keywords :
carbon nanotubes; elemental semiconductors; field effect transistors; nanotube devices; ohmic contacts; semiconductor-metal boundaries; C; carbon nanotube field effect transistors; device geometry; gate-drain spacer; gate-source spacer; ohmic contact; CNTFETs; Charge carrier processes; Electrons; FETs; Geometry; Materials science and technology; Microelectronics; Ohmic contacts; Organic materials; Poisson equations;
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
DOI :
10.1109/NANO.2005.1500641
