Title :
Effects of dot height uniformity on the performance of 1.3 μm InAs quantum dot lasers
Author :
Liu, Wei-Sheng ; Chang, Holin ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
We have systematically investigated the growth parameters of InAs quantum dots (QDs) so as to preserve the uniformity of dot height for 1.3 μm QD laser diodes. Devices that are prepared using the optimized growth conditions exhibit threshold current as low as 50 mA, and internal quantum efficiency as high as 63% under continuous-wave operation.
Keywords :
III-V semiconductors; indium compounds; laser transitions; molecular beam epitaxial growth; quantum dot lasers; self-assembly; semiconductor growth; 1.3 mum; 50 mA; 63 percent; InAs; InAs quantum dot lasers; continuous-wave operation; dot height uniformity; growth parameters; internal quantum efficiency; self-assembled quantum dots; threshold current; Atomic force microscopy; Diode lasers; Gallium arsenide; Indium; Molecular beam epitaxial growth; Quantum dot lasers; Semiconductor lasers; Temperature; Threshold current; US Department of Transportation;
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
DOI :
10.1109/NANO.2005.1500648
