DocumentCode
1854950
Title
Effects of dot height uniformity on the performance of 1.3 μm InAs quantum dot lasers
Author
Liu, Wei-Sheng ; Chang, Holin ; Chyi, Jen-Inn
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fYear
2005
fDate
11-15 July 2005
Firstpage
784
Abstract
We have systematically investigated the growth parameters of InAs quantum dots (QDs) so as to preserve the uniformity of dot height for 1.3 μm QD laser diodes. Devices that are prepared using the optimized growth conditions exhibit threshold current as low as 50 mA, and internal quantum efficiency as high as 63% under continuous-wave operation.
Keywords
III-V semiconductors; indium compounds; laser transitions; molecular beam epitaxial growth; quantum dot lasers; self-assembly; semiconductor growth; 1.3 mum; 50 mA; 63 percent; InAs; InAs quantum dot lasers; continuous-wave operation; dot height uniformity; growth parameters; internal quantum efficiency; self-assembled quantum dots; threshold current; Atomic force microscopy; Diode lasers; Gallium arsenide; Indium; Molecular beam epitaxial growth; Quantum dot lasers; Semiconductor lasers; Temperature; Threshold current; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN
0-7803-9199-3
Type
conf
DOI
10.1109/NANO.2005.1500648
Filename
1500648
Link To Document