Contactless electroreflectance study of CdSe/ZnBeSe quantum dots grown by molecular-beam epitaxy

Author

Huang, P.J. ; Liu, Y.T. ; Huang, Y.S. ; Munoz, M. ; Guo, S. ; Zhou, X. ; Tamargo, M.C. ; Giner, C.T. ; Rodriguez, A.H.

Author_Institution

Dept. of Electron. Eng., Nat. Taiwan Sci. & Technol. Univ., Taipei, Taiwan

fYear

2005

fDate

11-15 July 2005

Firstpage

799

Abstract

Contactless electroreflectance was used to investigate the capped CdSe/ZnBeSe and CdSe/ZnSe quantum-dot (QD) structures grown by molecular beam epitaxy on GaAs [001] substrates. The features originating from the QDs transitions for the CdSe QDs sandwiched by ZnBeSe show blue shifts and narrower lineshape as compared to those grown on ZnSe. The blue shifts of the QD transitions are related to the smaller QD size and the slightly higher barrier energy due to the presence of Be, while the smaller broadening parameters indicate the higher uniformity of the QD size distribution of the ZnBeSe sample.

Keywords

II-VI semiconductors; beryllium compounds; cadmium compounds; electroreflectance; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; spectral line shift; zinc compounds; CdSe-ZnBeSe; GaAs; GaAs [001] substrates; blue shifts; contactless electroreflectance; molecular-beam epitaxy; quantum dots; Buffer layers; Gallium arsenide; III-V semiconductor materials; Molecular beam epitaxial growth; Quantum dots; Shape; Substrates; Temperature; US Department of Transportation; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2005. 5th IEEE Conference on

Print_ISBN

0-7803-9199-3

Type

conf

DOI

10.1109/NANO.2005.1500652

Filename

1500652