High speed, low power, optoelectronic InP-based HBT integrated circuits

Author

Sokolich, Marko

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

fYear

2002

fDate

2002

Firstpage

483

Lastpage

490

Abstract

The next generation of fiber optic communication systems will require circuits operating at 50 GHz clock rates. InP-based Heterojunction Bipolar Transistors (HBTs) are ideally suited for the relatively low integration levels but high speed and low power required in optoelectronic transceivers. We review material, device and circuit issues related to InP HBT and the significant challenge that exists because communication system requirements are approaching the performance limits of high speed technologies.

Keywords

III-V semiconductors; bipolar MMIC; bipolar integrated circuits; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated circuit design; integrated circuit technology; integrated optoelectronics; low-power electronics; 50 GHz; InP; InP-based HBT integrated circuits; OEIC; circuit issues; device issues; heterojunction bipolar transistors; high speed ICs; low power ICs; material issues; optoelectronic integrated circuits; Bandwidth; Clocks; Data communication; Heterojunction bipolar transistors; High speed integrated circuits; Indium phosphide; Streaming media; Transceivers; Underwater cables; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2002. Proceedings of the IEEE 2002

Print_ISBN

0-7803-7250-6

Type

conf

DOI

10.1109/CICC.2002.1012883

Filename

1012883