Applications of crystalline Indium-Gallium-Zinc-Oxide technology to LSI: Memory, processor, image sensor, and field programmable gate array

Author

Kurokawa, Yusuke ; Okamoto, Yuji ; Nakagawa, T. ; Aoki, Toyohiro ; Ikeda, Makoto ; Kozuma, Munehiro ; Osada, Takenori ; Ikeda, Takashi ; Yamade, Naoto ; Okazaki, Yasuo ; Miyairi, Hidekazu ; Fujita, Masayuki ; Koyama, Jun ; Yamazaki, Shumpei

Author_Institution

Semicond. Energy Lab. Co., Ltd., Atsugi, Japan

fYear

2013

fDate

26-28 Aug. 2013

Firstpage

66

Lastpage

71

Abstract

Crystalline In-Ga-Zn Oxide (IGZO) including c-axis aligned crystal (CAAC) enables FETs to show high reliability and extremely low off-state current. CAAC-IGZO technology is expected to grow to main technology of next-generation displays and is already contributing to mass-production of liquid crystal displays. In this paper by focusing on a very important feature of CAAC-IGZO FET, extremely low off-state current, its pioneering various applications to LSI are reviewed and discussed. In particular, a success in development of a hybrid process of CMOS FETs and CAAC-IGZO FETs promotes our developments of novel memories, processors, image sensors, and recently, field programmable gate arrays (FPGA).

Keywords

CMOS integrated circuits; field effect transistors; field programmable gate arrays; gallium compounds; image sensors; indium compounds; integrated memory circuits; large scale integration; semiconductor materials; zinc compounds; CMOS; FET; FPGA; InGaZnO; LSI; c-axis aligned crystal; crystalline indium-gallium-zinc-oxide technology; field programmable gate array; hybrid process; image sensor; memory; off-state current; processor; reliability; CMOS integrated circuits; Field effect transistors; Field programmable gate arrays; Logic gates; Nonvolatile memory; Random access memory; Switches; CAAC; CAAC-IGZO; FPGA; IGZO; In-Ga-Zn-O; c-axis aligned crystal; crystalline In-Ga-Zn-O; field programmable gate array; hybrid process; image sensor; memory; oxide semiconductor; processor;

fLanguage

English

Publisher

ieee

Conference_Titel

Quality Electronic Design (ASQED), 2013 5th Asia Symposium on

Conference_Location

Penang

Print_ISBN

978-1-4799-1312-1

Type

conf

DOI

10.1109/ASQED.2013.6643566

Filename

6643566