Title :
A comprehensive geometry-dependent macromodel for substrate noise coupling in heavily doped CMOS processes
Author :
Ozis, Dicle ; Fiez, Terri ; Mayaram, Karti
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Abstract :
An accurate substrate noise coupling macromodel for heavily doped CMOS processes is presented. The model is based on Z parameters that are scalable with contact separation and size. Extensive experimental validations of the model have demonstrated that the modeled Z parameters are most often accurate to within 2-8%.
Keywords :
CMOS integrated circuits; heavily doped semiconductors; integrated circuit modelling; integrated circuit noise; Z parameters; geometry-dependent macromodel; heavily doped CMOS processes; substrate noise coupling; CMOS process; Circuit noise; Circuit simulation; Contact resistance; Coupling circuits; Integrated circuit noise; Low-frequency noise; Multi-stage noise shaping; Radio frequency; Semiconductor device modeling;
Conference_Titel :
Custom Integrated Circuits Conference, 2002. Proceedings of the IEEE 2002
Print_ISBN :
0-7803-7250-6
DOI :
10.1109/CICC.2002.1012887
