DocumentCode
1855544
Title
A comprehensive geometry-dependent macromodel for substrate noise coupling in heavily doped CMOS processes
Author
Ozis, Dicle ; Fiez, Terri ; Mayaram, Karti
Author_Institution
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
fYear
2002
fDate
2002
Firstpage
497
Lastpage
500
Abstract
An accurate substrate noise coupling macromodel for heavily doped CMOS processes is presented. The model is based on Z parameters that are scalable with contact separation and size. Extensive experimental validations of the model have demonstrated that the modeled Z parameters are most often accurate to within 2-8%.
Keywords
CMOS integrated circuits; heavily doped semiconductors; integrated circuit modelling; integrated circuit noise; Z parameters; geometry-dependent macromodel; heavily doped CMOS processes; substrate noise coupling; CMOS process; Circuit noise; Circuit simulation; Contact resistance; Coupling circuits; Integrated circuit noise; Low-frequency noise; Multi-stage noise shaping; Radio frequency; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2002. Proceedings of the IEEE 2002
Print_ISBN
0-7803-7250-6
Type
conf
DOI
10.1109/CICC.2002.1012887
Filename
1012887
Link To Document