RF power transistor reliability

Author

Martinez, Eugene C. ; Miller, John

Author_Institution

Motorola Inc., Scottsdale, AZ, USA

fYear

1994

fDate

24-27Jan 1994

Firstpage

83

Lastpage

87

Abstract

The purpose of this paper is to share the results of the accelerated life and reliability tests performed on the Motorola MRF-8123 RF power transistor. The tests were designed to produce data to determine if the part meets the reliability requirements established for RF power transistors in government electronic equipment. This paper includes the following for the MRFX123 RF power transistor: 1) accelerated life DC test methods and results, 2) rated power RF test methods and results, 3) failure rate based on experimental test data, and 4) failure rate in a military transmitter application using MIL-HDBK-217F1 methods and the test results

Keywords

bipolar transistors; failure analysis; military equipment; power transistors; reliability; semiconductor device testing; solid-state microwave devices; MIL-HDBK-217F1 methods; MRFX123; Motorola MRF-8123; RF power transistor reliability; accelerated life DC test; failure rate; military transmitter application; Electronic equipment testing; Failure analysis; Life estimation; Life testing; Performance evaluation; Power transistors; Radio frequency; Space technology; Temperature; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability and Maintainability Symposium, 1994. Proceedings., Annual

Conference_Location

Anaheim, CA

Print_ISBN

0-7803-1786-6

Type

conf

DOI

10.1109/RAMS.1994.291086

Filename

291086