Title :
The growth and Raman spectra of boron-doped silicon nanowires
Author :
Meng, Chao-Yu ; Chen, Jui-Lin ; Lee, Si-Chen
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Boron-doped silicon nanowires, synthesized under different temperatures and pressures, have been analysed by scanning electron microscope. The pressure affects the diameters of silicon nanowires more seriously than the temperature especially when growth temperature is below 440°C. The Fano fitting results of Raman spectra and the intensity ratio of anti-Stock/Stock reveal that the Raman downshift of boron-doped silicon nanowires is smaller than the un-doped ones due to the interaction between dopants and light induced plasma.
Keywords :
Raman spectra; boron; elemental semiconductors; nanowires; scanning electron microscopy; semiconductor doping; semiconductor growth; silicon; Fano fitting; Raman downshift; Raman spectra; Si:B; antistock-stock; boron-doped silicon nanowires growth; dopant-light induced plasma interaction; growth temperature; intensity ratio; scanning electron microscope; silicon nanowire diameters; Chaos; Glass; Gold; Heating; Nanowires; Plasma materials processing; Plasma temperature; Scanning electron microscopy; Silicon; Substrates;
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
DOI :
10.1109/NANO.2005.1500689
