Title :
Scanning tunneling microscope investigation of the current-voltage characteristics of a newly engineered π-electron molecule
Author :
Mallick, Govind ; Srivastava, Anubhav ; Lastella, Sarah ; Zheng, Qingdong ; Prasad, Paras N. ; Wickenden, Alma E. ; Dubey, Madan ; Karna, Shashi P.
Author_Institution :
US Army Res. Lab., Aberdeen Proving Ground, MD, USA
Abstract :
Current (I)-Voltage (V) characteristics of the self-assembled monolayer (SAM) of π-conjugated, 4,4´-1,4-phenylenebis(methylidynenitrilo)bisbenzene thiolate (PMNBT) adsorbed on Au (111) substrate have been investigated by scanning tunneling microscopy (STM). The measured tunneling current in the case of PMNBT SAM is much higher than that in the case of dodecanemonothiolate (DDMT) molecules. Furthermore, the PMNBT SAMs appear to exhibit a pronounced rectification of the tunneling current not observed in the case of DDMT. Possible reasons for the difference between the I-V characteristics of the two molecules are identified.
Keywords :
adsorption; atomic force microscopy; molecular electronics; monolayers; organic compounds; scanning tunnelling microscopy; self-assembly; tunnelling; 4,4´-1,4-phenylenebis(methylidynenitrilo)bisbenzene thiolate; Au substrate; adsorption; atomic force microscopy; current-voltage characteristics; dodecanemonothiolate molecules; engineered π-electron molecule; rectification; scanning tunneling microscope; self-assembled monolayers; tunneling current; Atomic force microscopy; Atomic layer deposition; Electrodes; Gold; Laboratories; Nuclear magnetic resonance; Rough surfaces; Substrates; Surface roughness; Tunneling;
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
DOI :
10.1109/NANO.2005.1500694
