Characterization of Cu(In, Ga)Se2 thin films and devices sputtered from a single target without additional selenization

Typically, Cu(In, Ga)Se₂ (CIGS) thin films for photovoltaic devices are deposited by co-evaporation or, alternately, by deposition of the metals with, or followed by, treatment in a selenium environment. In this proceeding, we describe CIGS films that are instead deposited by RF magnetron sputtering from a single quaternary target without any additional selenization. Devices built with these films exhibit efficiencies as high as 9.9%. These results represent the first report of working CIGS devices fabricated by sputtering without additional selenization. We demonstrate that deposition power can be varied in order to change the film morphology and improve device performance.