Effects of working pressure on CIGS thin films deposited by sputtering from a single quaternary target

We investigated the effects of working pressure on Cu(In, Ga)Se₂ (CIGS) thin films deposited by sputtering from a single quaternary target without any further post-selenization or sulfurization. Structural, compositional, and device properties were discussed. All films showed (112) preferred orientation with a chalcopyrite phase. Small amounts of the second phases Cu_2-xSe might exist. Although no significant difference in crystallization and composition, the device performance, especially the short circuit, was increased by increasing working pressure, which might be attributable to the reduction of ion damages.