DocumentCode :
1856737
Title :
Wideband Monolithic SDLA Design Using InP DHBT Technology
Author :
Haynes, Mark
Author_Institution :
SELEX Sensors & Airborne Syst. Ltd., Luton
fYear :
2008
fDate :
28-28 Feb. 2008
Firstpage :
1
Lastpage :
6
Abstract :
The design and measurement of a wideband successive detection logarithmic amplifier (SDLA) monolithic microwave integrated circuit (MMIC) using InP double heterojunction bipolar transistor technology (DHBT), is described in this paper. The MMIC uses cascaded differential amplifier gain stages together with full wave detectors to achieve a piecewise linear approximation to the ideal logarithmic response. The configuration also includes a limited RF output and on chip adjustment for gain and detector slope. The integrated circuit provides 33 dB dynamic range across 2-18 GHz for a plusmn1 dB log error, with a limited RF output of >-2.2 dBm. The circuit consumes 690 mW from a single -5 V supply rail in a chip area of 2.58 mm2.
Keywords :
III-V semiconductors; MMIC amplifiers; approximation theory; bipolar MMIC; differential amplifiers; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; piecewise linear techniques; wideband amplifiers; InP; InP DHBT technology; InP double heterojunction bipolar transistor technology; MMIC; cascaded differential amplifier gain stage; frequency 2 GHz to 18 GHz; full wave detectors; ideal logarithmic response; limited RF output; monolithic microwave integrated circuit; on chip adjustment; piecewise linear approximation; power 690 mW; voltage -5 V; wideband monolithic SDLA design; wideband successive detection logarithmic amplifier; DHBT; InP; SDLA;
fLanguage :
English
Publisher :
iet
Conference_Titel :
RF and Microwave IC Design, 2008 IET Seminar on
Conference_Location :
London
ISSN :
0537-9989
Print_ISBN :
978-0-86341-896-9
Type :
conf
Filename :
4542571
Link To Document :
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