A CMOS, self-biased charge amplifier

Author

Amendola, Gilles ; Blanchard, Yves ; Exertier, Anne ; Spirkovitch, Serge ; Lu, Guoneng ; Alquié, George

Author_Institution

ESIEE, Chambre de Commerce et d´´Ind. de Paris, Noisy-le-Grand, France

fYear

1999

fDate

1999

Firstpage

5

Lastpage

8

Abstract

In this article a charge amplifier dedicated to the signal processing of a capacitive silicon microphone is described. One feature of this amplifier is the implementation of a self-biased technique. It is a transconductance amplifier having a very high output resistance. The current consumption is quite low (20 μA without the bias circuit) and the dimensions are 210 μm by 170 μm (including all capacitors). The amplifier has been designed and fabricated in 0.8 μm CMOS technology. Both simulation and measurement results have shown the analog memorization of DC bias voltage

Keywords

CMOS analogue integrated circuits; low-power electronics; pulse amplifiers; switched capacitor networks; 0.8 micron; 20 muA; CMOS technology; DC bias voltage; analog memorization; capacitive microphone; current consumption; output resistance; self-biased charge amplifier; signal processing; transconductance amplifier; CMOS technology; Capacitive sensors; Capacitors; Circuit simulation; Circuit testing; Microphones; Operational amplifiers; Parasitic capacitance; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Design of Mixed-Mode Integrated Circuits and Applications, 1999. Third International Workshop on

Conference_Location

Puerto Vallarta

Print_ISBN

0-7803-5588-1

Type

conf

DOI

10.1109/MMICA.1999.833580

Filename

833580