Sulfurization growth of CuInS2 thin films and solar cells using ditertiarybutylsulfide as a less-hazardous source

Ditertiarybutylsulfide [(t-C₄H₉)₂S: DtBS] was shown to be a promising, less hazardous alternative source for the sulfurization of CuInS₂ films. Single-phase, polycrystalline CuInS₂ films were formed at 575 °C for 15 min. Photoluminescence spectra at low temperatures were dominated by characteristic bands at 1.34 and 1.37 eV, demonstrating that the films are a suitable material for the photo-absorbing layer of CuInS₂-based solar cells. These results represent the first step toward realizing a solar cell using a CuInS₂ film grown by sulfurization using an organometallic source and conventional, large-scale equipment.