DocumentCode :
1856828
Title :
Comparison of the potential distributions at grain boundaries on the surface and in the depth of the absorber in Cu(In, Ga)Se2 thin-film solar cells
Author :
Zhang, Zhenhao ; Tang, Xiaochen ; Lemmer, Uli ; Kiowski, Oliver ; Powalla, Michael ; Hölscher, Hendrik
Author_Institution :
Light Technol. Inst., Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany
fYear :
2011
fDate :
19-24 June 2011
Abstract :
Grain boundaries in the Cu(In, Ga)Se2 absorber layer are investigated applying Kelvin probe force microscopy. Potential distributions at grain boundaries on the absorber surface and on untreated cross section of the solar cell are compared. Depending on potential variation, three types of grain boundaries can be classified at the absorber surface, while a single type of grain boundaries with much smaller potential variations is identified at the cross section. This result suggests the electrically neutral properties of most of the buried grain boundaries in the absorber.
Keywords :
copper compounds; gallium compounds; grain boundaries; indium compounds; semiconductor thin films; solar absorber-convertors; solar cells; ternary semiconductors; thin film devices; CuInGaSe2; Kelvin probe force microscopy; absorber depth; absorber layer; absorber surface; buried grain boundaries; thin-film solar cells; Electric potential; Grain boundaries; Microscopy; Photovoltaic cells; Probes; Surface topography; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6185989
Filename :
6185989
Link To Document :
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