Title :
The progresses of MRAM as a memory to save energy consumption and its potential for further reduction
Author :
Yoda, H. ; Kitagawa, E. ; Shimomura, N. ; Fujita, S. ; Amano, M.
Author_Institution :
Center for Semicond. R&D, Toshiba Corp., Semicond. & Storage Products Co., Kawasaki, Japan
Abstract :
Critical switching current, Isw, of STT (Spin Transfer Torque)-MRAM has been reduced by several orders with perpendicular MTJ and the state-of-the-art write charge, Qw, becomes the order of 100-150fC. With the small Qw, MRAM starts to save energy consumption by 70-80% compared with a conventional memory system. Analysis of the write pulse-width dependence of Iw revealed a further potential of perpendicular MTJ to reduce Iw and Qw. STT-MRAM is thought to achieve a further reduction of energy consumption.
Keywords :
MRAM devices; energy consumption; magnetic tunnelling; power aware computing; STT-MRAM; critical switching current; energy consumption; perpendicular MTJ; spin transfer torque-MRAM; write charge; write pulse-width dependence; Energy consumption; Magnetic tunneling; Memory management; Nonvolatile memory; Random access memory; Switches; Writing;
Conference_Titel :
VLSI Technology (VLSI Technology), 2015 Symposium on
Conference_Location :
Kyoto
DOI :
10.1109/VLSIT.2015.7223638
