Title :
Low-power embedded ReRAM technology for IoT applications
Author :
Ueki, M. ; Takeuchi, K. ; Yamamoto, T. ; Tanabe, A. ; Ikarashi, N. ; Saitoh, M. ; Nagumo, T. ; Sunamura, H. ; Narihiro, M. ; Uejima, K. ; Masuzaki, K. ; Furutake, N. ; Saito, S. ; Yabe, Y. ; Mitsuiki, A. ; Takeda, K. ; Hase, T. ; Hayashi, Y.
Author_Institution :
Mass Market & Emerging Country Bus. Div., Sagamihara, Japan
Abstract :
A low-power 2Mb ReRAM macro was developed in 90 nm CMOS platform, demonstrating lower power data-writing (x1/7) and faster data-reading (x2~3) as compared to a conventional flash. The memory window at -6σ for 10 years was confirmed with a high-speed 1-bit ECC considering operating temperature ranging from -40 to 85 °C, where the worst conditions are high-temperature (85°C) “Off” writing and low-temperature (-40°C) “On” writing followed by high-temperature (85°C) retention. A pulse-modulated Off-state verify and an interface-control of Ru electrode are effective for suppressing random fluctuation of Roff readout and for sustaining the On-state retention, respectively.
Keywords :
CMOS memory circuits; Internet of Things; low-power electronics; resistive RAM; CMOS integrated circuit; ECC; Internet of Things; IoT applications; fast data reading; low-power embedded ReRAM technology; lower power data writing; pulse modulated off-state; size 90 nm; temperature -40 C to 85 C; Electrodes; Metals; Noise; Oxygen; Resistance; Very large scale integration; Writing;
Conference_Titel :
VLSI Technology (VLSI Technology), 2015 Symposium on
Conference_Location :
Kyoto
DOI :
10.1109/VLSIT.2015.7223640
