Title :
Reliability enhancement of 1Xnm TLC for cold flash and millennium memories
Author :
Yamazaki, Senju ; Tanakamaru, Shuhei ; Suzuki, Sakuya ; Iwasaki, Tomoko Ogura ; Hachiya, Shogo ; Takeuchi, Ken
Author_Institution :
Chuo Univ., Tokyo, Japan
Abstract :
Endurance and retention are measured in 1Xnm Triple Level Cell (TLC) NAND and the flexible nLC scheme (flex-nLC) is proposed to improve reliability. This method enables the use of lowest-cost TLC NAND as is, in long term storage applications such as cold flash and digital archive: millennium memory, which have 20 and 1000 years retention, respectively.
Keywords :
flash memories; flexible electronics; integrated circuit reliability; logic gates; TLC NAND; cold flash memories; digital archive; flex-nLC; flexible nLC scheme; millennium memories; time 1000 year; time 20 year; triple level cell; Bit error rate; Encoding; Measurement uncertainty; Reliability; Temperature measurement; Time measurement;
Conference_Titel :
VLSI Technology (VLSI Technology), 2015 Symposium on
Conference_Location :
Kyoto
DOI :
10.1109/VLSIT.2015.7223642
