DocumentCode
1857010
Title
Using transient response of tin oxide gas sensor for measuring hydrogen concentration
Author
Anisimov, O.V. ; Maksimova, N.K. ; Sevastyanov, E.Y. ; Sergeychenko, N.V.
Author_Institution
Siberian Phys. Tech. Inst., Tomsk
fYear
2009
fDate
27-28 March 2009
Firstpage
143
Lastpage
147
Abstract
In this paper, relationship between transient response of conductivity of tin oxide gas sensor and hydrogen concentration is described. Transient response is caused with periodical temperature changes. Theoretical part is based on Langmuir theory of adsorption and barrier theory of semiconductor. The theory was experimentally proven.
Keywords
adsorption; chemical variables measurement; gas sensors; hydrogen; semiconductor thin films; tin compounds; transient response; H; Langmuir theory of adsorption; SnO2; barrier theory of semiconductor; hydrogen concentration measurement; periodical temperature changes; semiconductor gas sensor; tin oxide gas sensor; transient response; Communication system control; Conductivity; Gas detectors; Heating; Hydrogen; Kinetic theory; Temperature sensors; Thermal sensors; Tin; Transient response; Gas sensor; adsorption; hydrogen; tin oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Control and Communications, 2009. SIBCON 2009. International Siberian Conference on
Conference_Location
Tomsk
Print_ISBN
978-1-4244-2007-0
Type
conf
DOI
10.1109/SIBCON.2009.5044845
Filename
5044845
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