Title :
Concentration effects of tunnel diode for optimizations of multi-junction solar cells
Author :
Hong, Guo-Hsuan ; Yu, Peichen
Author_Institution :
Dept. of Photonics, Inst. of Electro-Opt. Eng., Hsinchu, Taiwan
Abstract :
Tunnel diodes, also known as Esaki diodes, play an important role in III-V multi junction solar cells. In this work, we theoretically investigated the electrical characteristics of a GaAs tunnel diode and its performance against the illumination conditions such as light intensity, spatial profile, etc. We then developed a methodology to optimize a triple junction InGap/GaAs/Ge solar cell with a GaAs tunnel junction. The conversion efficiency drops with the increase of the concentration ratio is also discussed.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; solar cells; tunnel diodes; tunnelling; Esaki diodes; III-V multi junction solar cells; InGaP-GaAs-Ge; multi-junction solar cells optimizations; tunnel diode concentration effects; Gallium arsenide; Junctions; Mathematical model; Photovoltaic cells; Semiconductor diodes; Sun;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6185999
