Title :
Measurements of electric potential in GaAs detectors using Kelvin Probe Force Microscopy
Author :
Kaztaev, -P G. ; Novikov, V.A. ; Ponomarev, I.V.
Author_Institution :
Tomsk State Univ., Tomsk
Abstract :
The contact potential difference (CPD) and surface voltage drop (SVD) has been investigated on epitaxial detector p+-n-n+ - structures using Kelvin Probe Force Microscopy (SPFM). The structures were based on undoped n-GaAs layers. The nonuniform distribution of the CPD in n-GaAs layer has been obtained. Applied reverse bias drops on the three regions within n-GaAs layer.
Keywords :
III-V semiconductors; contact potential; gallium arsenide; p-n junctions; semiconductor epitaxial layers; surface conductivity; GaAs; Kelvin probe force microscopy; contact potential difference; electric potential; epitaxial detector; nonuniform distribution; p+-n-n+ structures; reverse bias drops; surface voltage drop; Buffer layers; Detectors; Electric potential; Electric variables measurement; Force measurement; Gallium arsenide; Kelvin; Microscopy; Probes; Voltage; GaAs; KPFM; contact potential difference; detector; surface voltage drop;
Conference_Titel :
Control and Communications, 2009. SIBCON 2009. International Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
978-1-4244-2007-0
DOI :
10.1109/SIBCON.2009.5044849
