Title :
X-ray image converter based on GaAs-ZnS structures
Author :
Kalygina, V.M. ; Tyahzev, A.V. ; Yaskevich, T.M.
Author_Institution :
Tomsk State Univ., Tomsk
Abstract :
Solid-state imager converters with optical read-out information for detection of x-ray radiation are studied in the energy range 40-140 keV.
Keywords :
II-VI semiconductors; III-V semiconductors; X-ray apparatus; gallium arsenide; wide band gap semiconductors; zinc compounds; GaAs-ZnS; X-ray image convertion; X-ray radiation detection; electron volt energy 40 keV to 140 keV; optical read-out information; Anodes; Communication system control; Gallium arsenide; Image converters; Photoconductivity; Radiation detectors; Solid state circuits; Voltage; X-ray detection; X-ray imaging; GaAs; X-radiation; exposure rate; solid-state imager converter;
Conference_Titel :
Control and Communications, 2009. SIBCON 2009. International Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
978-1-4244-2007-0
DOI :
10.1109/SIBCON.2009.5044851
