DocumentCode
1857155
Title
Transformation of current-voltage characteristics of GaAs π-ν-n-structures under modification of π-layer resistance
Author
Prudaev, I.A. ; Skakunov, M.S. ; Khludkov, S.S.
Author_Institution
RID Ltd., Tomsk
fYear
2009
fDate
27-28 March 2009
Firstpage
180
Lastpage
184
Abstract
Results of investigation of forward and reverse current-voltage characteristics (CVC) of diodes based on GaAs doped by Cr (GaAs:Cr) and doped by Cr, Fe simultaneously (GaAs:Cr,Fe) are stated. It is shown that reduction of base resistance of diodes based on compensated material lead to transformation of static CVC and to appearance of negative differential resistance (NDR) region on reverse CVC.
Keywords
III-V semiconductors; chromium; gallium arsenide; iron; semiconductor diodes; GaAs:Cr; GaAs:Cr,Fe; compensated material; diodes; negative differential resistance region; pi-layer resistance; pi-nu-n-structures; reverse current-voltage characteristics; Chromium; Communication system control; Current-voltage characteristics; Gallium arsenide; Iron; Semiconductor device doping; Semiconductor diodes; Switches; Temperature; Voltage; Avalanche S-diode; current-voltage characteristics; gallium arsenide;
fLanguage
English
Publisher
ieee
Conference_Titel
Control and Communications, 2009. SIBCON 2009. International Siberian Conference on
Conference_Location
Tomsk
Print_ISBN
978-1-4244-2007-0
Type
conf
DOI
10.1109/SIBCON.2009.5044852
Filename
5044852
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