Title :
Transformation of current-voltage characteristics of GaAs π-ν-n-structures under modification of π-layer resistance
Author :
Prudaev, I.A. ; Skakunov, M.S. ; Khludkov, S.S.
Author_Institution :
RID Ltd., Tomsk
Abstract :
Results of investigation of forward and reverse current-voltage characteristics (CVC) of diodes based on GaAs doped by Cr (GaAs:Cr) and doped by Cr, Fe simultaneously (GaAs:Cr,Fe) are stated. It is shown that reduction of base resistance of diodes based on compensated material lead to transformation of static CVC and to appearance of negative differential resistance (NDR) region on reverse CVC.
Keywords :
III-V semiconductors; chromium; gallium arsenide; iron; semiconductor diodes; GaAs:Cr; GaAs:Cr,Fe; compensated material; diodes; negative differential resistance region; pi-layer resistance; pi-nu-n-structures; reverse current-voltage characteristics; Chromium; Communication system control; Current-voltage characteristics; Gallium arsenide; Iron; Semiconductor device doping; Semiconductor diodes; Switches; Temperature; Voltage; Avalanche S-diode; current-voltage characteristics; gallium arsenide;
Conference_Titel :
Control and Communications, 2009. SIBCON 2009. International Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
978-1-4244-2007-0
DOI :
10.1109/SIBCON.2009.5044852
