Sensitivity to NH3 of SnO2 thin films prepared by magnetron sputtering

Author

Anisimov, O.V. ; Maksimova, N.K. ; Chernikov, E.V. ; Sevastyanov, E.Y. ; Sergeychenko, N.V.

Author_Institution

Siberian Phys. Tech. Inst., Tomsk

fYear

2009

fDate

27-28 March 2009

Firstpage

189

Lastpage

193

Abstract

SnO₂ thin film sensor was fabricated with microelectronic technology and NH₃ (ammonia) gas sensing characteristics were measured in a temperature range 200-375degC. It was observed that surface doping with platinum improves significantly the material´s sensitivity to ammonia, and the optimal operational temperature of the sensor was 325degC. The sensor showed high sensitivity to low NH₃ concentration in the range 20-350 ppm with relatively fast response (10 s) and recovery times (30 s), respectively.

Keywords

ammonia; gas sensors; platinum; semiconductor doping; semiconductor thin films; sputter deposition; thin film sensors; tin compounds; NH₃ concentration; SnO₂:Pt; ammonia; gas sensing characteristics; magnetron sputtering; microelectronic technology; optimal operational temperature; platinum; surface doping; temperature 200 C to 375 C; thin film sensor; Chemical sensors; Communication system control; Microelectronics; Plasma measurements; Sensor phenomena and characterization; Sputtering; Substrates; Temperature measurement; Temperature sensors; Thin film sensors; Gas sensors; sensing properties; thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Control and Communications, 2009. SIBCON 2009. International Siberian Conference on

Conference_Location

Tomsk

Print_ISBN

978-1-4244-2007-0

Type

conf

DOI

10.1109/SIBCON.2009.5044854

Filename

5044854