Atomic layer deposition enabled interconnect technology for vertical nanowire array devices

In this study, we have demonstrated atomic layer deposition (ALD) enabled interconnection technology for vertical, as-grown c-axis oriented GaN nanowire (NW) arrays encapsulated by benzocyclobutene (BCB). The nano-scaled ALD multilayer is essential to provide conformal dielectric/conductor coverage and precise thickness control for NW interconnects. Cross-sectional images taken in a focused ion beam (FIB) tool and resistance measurement performed on the NW devices confirms the conformality of ALD-W films. This interconnect technology can be applied to different vertical nanowire array devices, such as nanowire light emitting diodes (LEDs), metal semiconductor field effect transistor (MESFET), resonator or solid state super-capacitors.