Large response of a hybrid inorganic-polymer photodetector

Author

Pradhan, Basudev ; Ray, Asim K. ; Sharma, Ashwani K.

Author_Institution

Dept. of Solid State Phys., Indian Assoc. for the Cultivation of Sci., Calcutta, India

fYear

2005

fDate

11-15 July 2005

Firstpage

249

Abstract

Hybrid inorganic-polymer p-n junction device structures are fabricated using chemical bath deposited cadmium sulphide nanoparticles as inorganic photosensitive n-type materials and poly (9-vinyl carbazole) as a hole conducting polymer. This device displays rectifying ratio as large as 11. The photoresponsivity increases with the reverse bias voltage and its value is found to be typically 1.2 AW^-1 at the reverse bias of 2 V.

Keywords

II-VI semiconductors; cadmium compounds; conducting polymers; liquid phase deposition; nanoparticles; nanotechnology; organic-inorganic hybrid materials; photodetectors; semiconductor heterojunctions; wide band gap semiconductors; 2 V; CdS; cadmium sulphide nanoparticles; chemical bath deposition; hole conducting polymers; hybrid inorganic-polymer photodetector; inorganic photosensitive n-type materials; p-n junction device structures; photoresponsivity; poly (9-vinyl carbazole); rectifying ratio; reverse bias voltage; Cadmium; Conducting materials; Displays; Inorganic chemicals; Inorganic materials; Nanoparticles; P-n junctions; Photodetectors; Polymers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2005. 5th IEEE Conference on

Print_ISBN

0-7803-9199-3

Type

conf

DOI

10.1109/NANO.2005.1500742

Filename

1500742