Title :
Identification of hydrogen incorporation into GaAsN by growth with deuterated precursors
Author :
Wada, S. ; Tanaka, T. ; Inagaki, M. ; Ikeda, K. ; Kojima, N. ; Ohshita, Y. ; Yamaguchi, M.
Author_Institution :
Toyota Technol. Inst., Nagoya, Japan
Abstract :
The hydrogen that constitutes N-H in GaAsN grown by the chemical beam epitaxy (CBE) equally comes from the nitrogen precursors (monomethylhydrazine) and arsenic precursors (trisdimethylaminoarsenic). The ratio of the contributions from those two precursors to the N-H constitution varied with the growth temperature of GaAsN. Further, the temperature dependence was different in each local vibration mode (LVM) of N-H.
Keywords :
III-V semiconductors; gallium arsenide; hydrogen; nitrogen compounds; semiconductor epitaxial layers; solar cells; vibrations; wide band gap semiconductors; CBE; GaAsN; LVM; NH; arsenic precursors; chemical beam epitaxy; deuterated precursors growth; hydrogen incorporation identification; local vibration mode; monomethylhydrazine; nitrogen precursors; tandem solar cells; temperature dependence; trisdimethylaminoarsenic; Absorption; Carbon; Chemicals; Doping; Molecular beam epitaxial growth; Nitrogen;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186017
