Title :
A simple power diode model with forward and reverse recovery
Author :
Ma, Cliff L. ; Lauritzen, Peter O.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Abstract :
The diode model presented is a simplified physical model for a high-voltage p-i-n structure operating in high level injection, as is typical for most power diodes. The model is an extension of the basic charge-control diode model using the lumped charge concept. The equations for both forward and reverse recovery as well as the emitter recombination are derived from simplified semiconductor charge transport equations. The complete model requires only seven simple equations and three additional device parameters beyond the generic SPICE diode model
Keywords :
electron-hole recombination; semiconductor device models; semiconductor diodes; HV p-i-n structure; charge-control diode model; emitter recombination; forward recovery; generic SPICE diode model; high level injection; lumped charge concept; power diode model; reverse recovery; semiconductor charge transport equations; Analog circuits; Charge carrier processes; Circuit simulation; Equations; P-i-n diodes; PIN photodiodes; Physics; Power electronics; SPICE; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1991. PESC '91 Record., 22nd Annual IEEE
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-0090-4
DOI :
10.1109/PESC.1991.162708
