• DocumentCode
    1857460
  • Title

    Compatibility of co-tunneling and power-law models of soft breakdown current in MOS structures

  • Author

    Conde, A. Ortiz ; Miranda, E. ; Sanchez, F. J Garcia ; Muci, J.

  • Author_Institution
    Solid State Electron. Lab., Simon Bolivar Univ., Caracas
  • fYear
    2008
  • fDate
    28-30 April 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The connection between two of the most frequently used mathematical models to fit the soft breakdown I-V characteristic in MOS devices was investigated. First, we show that our experimental data is well represented by the monomial power-law model and we extract its parameters by means of an auxiliary operator that involves numerical integration of the I-V curve. Next, we consider the co-tunneling conduction model, which represents the current by a polynomial expression with only odd-order terms and positive coefficients. The best fit of our experimental data to odd-order polynomials yields some negative coefficients, which is contrary to its physical foundations. Finally, in an attempt to conciliate both representations, we have approximated the power-law model to a polynomial with only odd-order terms and arbitrary coefficients and again we have found that is not possible to obtain all positive coefficients.
  • Keywords
    MIS structures; integration; polynomials; I-V curve; MOS structures; auxiliary operator; co-tunneling conduction model; mathematical models; monomial power-law model; numerical integration; polynomial expression; soft breakdown I-V characteristic; soft breakdown current; Circuits and systems; Data mining; Electric breakdown; MOS devices; Parameter extraction; Polynomials; Power system modeling; Semiconductor device noise; Solid modeling; Solid state circuits; MOS; least-square integral method; oxide Breakdown; reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Devices, Circuits and Systems, 2008. ICCDCS 2008. 7th International Caribbean Conference on
  • Conference_Location
    Cancun
  • Print_ISBN
    978-1-4244-1956-2
  • Electronic_ISBN
    978-1-4244-1957-9
  • Type

    conf

  • DOI
    10.1109/ICCDCS.2008.4542616
  • Filename
    4542616