A high efficiency GaAs power amplifier module with a single voltage for digital cellular phone systems

Author

Nishida, M. ; Murai, S. ; Uda, H. ; Tominaga, H. ; Sawai, T. ; Ibaraki, A.

Author_Institution

Microelectron. Res. Centre, Sanyo Electr. Co. Ltd., Osaka, Japan

Volume

2

fYear

1998

fDate

7-12 June 1998

Firstpage

443

Abstract

This work describes a two-stage 0.2 cc power amplifier (PA) module with single voltage operation for digital cellular phone system terminals. A new GaAs FET structure enables this operation. To increase power-added efficiency, it is found to be advantageous to use heat spreading with a Cu plate in the cavity and second-order harmonic suppression with the trap capacitor built into the drain bias circuit. Output power of 30.5 dBm with power added efficiency of 54% has been obtained at 1.45 GHz and 3.5 V.

Keywords

III-V semiconductors; UHF power amplifiers; cellular radio; digital radio; field effect transistor circuits; gallium arsenide; modules; telephone sets; 1.45 GHz; 3.5 V; 54 percent; Cu plate; GaAs; GaAs FET power amplifier module; cavity; digital cellular phone system; drain bias circuit; heat spreading; output power; power-added efficiency; second-order harmonic suppression; single voltage operation; trap capacitor; Capacitors; Cellular phones; Circuits; FETs; Gallium arsenide; Harmonics suppression; High power amplifiers; Operational amplifiers; Power amplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705028

Filename

705028