Author :
Huang, M.L. ; Chang, S.W. ; Chen, M.K. ; Fan, C.H. ; Lin, H.T. ; Lin, C.H. ; Chu, R.L. ; Lee, K.Y. ; Khaderbad, M.A. ; Chen, Z.C. ; Lin, C.H. ; Chen, C.H. ; Lin, L.T. ; Lin, H.J. ; Chang, H.C. ; Yang, C.L. ; Leung, Y.K. ; Yeo, Y.-C. ; Jang, S.M. ; Hwang,
Abstract :
In0.53Ga0.47As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In0.53Ga0.47As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS~95 mV/dec., Ion/Ioff ~105, DIBL ~51 mV/V at Vds = 0.5V for Lg=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high field effect mobility (μEF = 1837 cm2/V-s with EOT ~ 0.9 nm) is among the highest values reported for surface channel In0.53Ga0.47As MOSFETs.
Keywords :
Hall mobility; III-V semiconductors; MOSFET; elemental semiconductors; epitaxial growth; gallium arsenide; indium compounds; semiconductor device models; semiconductor epitaxial layers; silicon; Hall electron mobility; In0.53Ga0.47As; Si; Si substrate; epitaxial In0.53Ga0.47As channel layer; gate stack quality; high field effect mobility; size 150 nm; size 300 mm; surface channel In0.53Ga0.47As MOSFET; voltage 0.5 V; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; MOSFET; Silicon; Substrates;
