Optical properties of InGaN/GaN nanorods fabricated by inductively coupled plasma etching

The fabrication of In_0.3Ga_0.7N/GaN multiple quantum wells nanorods with diameters of 60∼100 nm and their optical characteristics performed by micron photo-luminescence measurements are presented. The photoluminescence (PL) spectra with sharp linewidths of typically 1.5 nm were observed at 4K. The excitation power dependent spectra show that no energy shift was observed for these sharp peaks. Increasing the excitation power instead leads to an occurrence of new, sharp PL peaks at the higher energy tail of the PL spectra, which suggest that excitons are strongly confined in quantum dots-like region or localization centers.