• DocumentCode
    1857801
  • Title

    Nonuniform carrier trapping among quantum dots

  • Author

    Su, Yi-Shin ; Chang, Wei-Che ; Lin, Ching-Fuh

  • Author_Institution
    Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2005
  • fDate
    11-15 July 2005
  • Firstpage
    328
  • Abstract
    In quantum-dot (QD) structures, carriers do not distribute uniformly among QDs. Carriers tend to distribute at larger QDs. Combined with state filling effect, carrier will populate larger QDs first. Then, carrier will populate smaller QDs at higher injection density. The nonuniform carrier distribution also leads to the separation of two emission peaks with increasing current. On the fabricated devices, the photon energy difference between the two peaks increased from 70.8 meV at 60 mA to 78 meV at 160 mA. By observing the peak separation, the tendency of carrier distribution can be identified.
  • Keywords
    charge injection; electron traps; hole traps; semiconductor quantum dots; 160 mA; 60 mA; carrier distribution; carrier injection density; emission peaks; nonuniform carrier trapping; photon energy; quantum dot structure; state filling effect; Doping; Etching; Fluctuations; Gallium arsenide; Laser tuning; Optical devices; Optical waveguides; Quantum dots; Quantum well devices; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2005. 5th IEEE Conference on
  • Print_ISBN
    0-7803-9199-3
  • Type

    conf

  • DOI
    10.1109/NANO.2005.1500762
  • Filename
    1500762