DocumentCode :
1857848
Title :
Crystalline silicon thin film photovoltaic solar cells based on energy efficient nanomembrane transfer process
Author :
Li, Rui ; Yang, Weiquan ; Ma, Zhenqiang ; Zhou, Weidong
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Arlington, Arlington, TX, USA
fYear :
2011
fDate :
19-24 June 2011
Abstract :
We report here experimental demonstration of crystalline semiconductor Si nanomembrane thin film solar cells based on room temperature frame-assisted membrane transfer (FAMT) process. Low-temperature compatible annealing processes have also been investigated for optimal metal contact formation. For two micrometer thick p-n junction Si solar cells, we obtained an open circuit voltage of 0.38 V and power efficiency of 1.64%, without any anti-reflection coating or light trapping schemes. Incorporating optimal anti-reflection coating, light trapping and plasmonic structures, we expect the cell efficiency to approach 10% and more for 2 μm thick Si cells. The results demonstrate a promising future for such a new type of cost effective flexible thin film solar cells, based on crystalline semiconductor membranes.
Keywords :
annealing; antireflection coatings; elemental semiconductors; membranes; nanostructured materials; p-n junctions; plasmonics; semiconductor thin films; silicon; solar cells; thin film devices; FAMT process; Si; cell efficiency; crystalline semiconductor Si nanomembrane thin film photovoltaic solar cells; crystalline semiconductor membranes-based flexible thin film solar cells; energy efficient nanomembrane transfer process; frame-assisted membrane transfer process; light trapping; low-temperature compatible annealing process; open circuit voltage; optimal antireflection coating; optimal metal contact formation; plasmonic structures; power efficiency; size 2 mum; two micrometer thick p-n junction Si solar cells; voltage 0.38 V; Annealing; Fingers; Glass; Photovoltaic cells; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186035
Filename :
6186035
Link To Document :
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