Title :
Detectability of the Two-Dimensional Detector for Time Resolved Emission Measurement
Author_Institution :
Syst. Div., Hamamatsu Photonics K.K., Tsukuba
Abstract :
Time resolved emission measurement is a powerful tool to analyze the internal operating timing of LSI with picosecond resolution. In addition, TRE measurement can be used as a means to evaluate parametric fluctuations of transistors influenced by manufacturing process fluctuations. The newly developed two-dimensional NIR photocathode detector, also, has the high detectability towards quiescent state photoemission of transistors that are operating under 1.0V.
Keywords :
field effect transistor circuits; integrated circuit manufacture; integrated circuit measurement; large scale integration; photocathodes; photodetectors; photoemission; FET; LSI; manufacturing process fluctuations; parametric fluctuations; picosecond resolution; quiescent state photoemission; time resolved emission measurement; transistors; two-dimensional NIR photocathode detector; two-dimensional detector; voltage 1.0 V; Cathodes; Detectors; Fluctuations; Integrated circuit measurements; Large scale integration; Leakage current; Manufacturing processes; Photoelectricity; Time measurement; Voltage; Time Resolved Emission. two-dimensional detector;
Conference_Titel :
Asian Test Symposium, 2008. ATS '08. 17th
Conference_Location :
Sapporo
Print_ISBN :
978-0-7695-3396-4
DOI :
10.1109/ATS.2008.30
