• DocumentCode
    1857976
  • Title

    Yearly averaged light trapping for thin films

  • Author

    Scouros, Evan ; Peumans, P.

  • Author_Institution
    Stanford Univ., Palo Alto, CA, USA
  • fYear
    2011
  • fDate
    19-24 June 2011
  • Abstract
    A light trapping method is proposed making use of non-tracking concentrators taking into account the solar resource over an entire year. The maximum concentration achievable was calculated to be 4.6 for a PV cell embedded in glass. This method was applied to thin film solar cells, in particular aSi and CIGS solar cells. The aSi stack consisted of ZnO, aSi, and ZnO, while the CIGS stack consisted of AZO, ZnO, CdS, CIGS, with a 30% Ga content. Simulations and optimisation routines were run to estimate the best thickness and CPC concentrator parameters. The parameter to be optimised was the total AmpHours collected over an entire year for a location in Southern California. It was found that the CPC needs to accept as broadly as possible and the thickness of the films were determined at 110nm for aSi and 1500nm for CIGS.
  • Keywords
    II-VI semiconductors; aluminium; amorphous semiconductors; cadmium compounds; copper compounds; gallium compounds; indium compounds; optimisation; silicon; solar cells; solar energy concentrators; ternary semiconductors; thin film devices; wide band gap semiconductors; zinc compounds; CIGS stack; CPC concentrator parameter; CuInGaS2-ZnO:Al-CdS; PV cell; Si-ZnO; Southern California; glass; light trapping method; nontracking concentrator; optimisation; size 110 nm; size 1500 nm; solar resource; thin film solar cell; Charge carrier processes; Optical films; Optical reflection; Photovoltaic cells; Sun; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-9966-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2011.6186044
  • Filename
    6186044