DocumentCode :
1857976
Title :
Yearly averaged light trapping for thin films
Author :
Scouros, Evan ; Peumans, P.
Author_Institution :
Stanford Univ., Palo Alto, CA, USA
fYear :
2011
fDate :
19-24 June 2011
Abstract :
A light trapping method is proposed making use of non-tracking concentrators taking into account the solar resource over an entire year. The maximum concentration achievable was calculated to be 4.6 for a PV cell embedded in glass. This method was applied to thin film solar cells, in particular aSi and CIGS solar cells. The aSi stack consisted of ZnO, aSi, and ZnO, while the CIGS stack consisted of AZO, ZnO, CdS, CIGS, with a 30% Ga content. Simulations and optimisation routines were run to estimate the best thickness and CPC concentrator parameters. The parameter to be optimised was the total AmpHours collected over an entire year for a location in Southern California. It was found that the CPC needs to accept as broadly as possible and the thickness of the films were determined at 110nm for aSi and 1500nm for CIGS.
Keywords :
II-VI semiconductors; aluminium; amorphous semiconductors; cadmium compounds; copper compounds; gallium compounds; indium compounds; optimisation; silicon; solar cells; solar energy concentrators; ternary semiconductors; thin film devices; wide band gap semiconductors; zinc compounds; CIGS stack; CPC concentrator parameter; CuInGaS2-ZnO:Al-CdS; PV cell; Si-ZnO; Southern California; glass; light trapping method; nontracking concentrator; optimisation; size 110 nm; size 1500 nm; solar resource; thin film solar cell; Charge carrier processes; Optical films; Optical reflection; Photovoltaic cells; Sun; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186044
Filename :
6186044
Link To Document :
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