• DocumentCode
    1858015
  • Title

    New high optical band gap window p layer contact development

  • Author

    Wang, Dapeng ; Chen, Hui ; Phatak, Anup ; Zhao, Lai ; Frei, Michel ; Chae, Yong Kee ; Yuan, Zheng ; Bezryadina, Anna ; Alers, Glenn

  • Author_Institution
    Appl. Mater., Santa Clara, CA, USA
  • fYear
    2011
  • fDate
    19-24 June 2011
  • Abstract
    We developed new hydrogenated boron doped amorphous silicon oxide window p layer for thin film solar device on the commercial SnO2:F TCO. With improved optical band gap (OBG), low refraction index and low defect density, the tandem junction top cell blue response is improved as well as the overall current. Devices with the optimized film have shown higher efficiency comparing with the baseline process.
  • Keywords
    energy gap; solar cells; thin films; OBG; SiO:B; SnO2:F; high optical band gap window p layer contact development; hydrogenated boron doped amorphous silicon oxide window p layer; low defect density; low refraction index; optical band gap; tandem junction top cell blue response; thin film solar device; Absorption; Boron; Junctions; Optical films; Photonic band gap; Photovoltaic cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-9966-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2011.6186047
  • Filename
    6186047
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1858015