• DocumentCode
    1858035
  • Title

    Thermal impedance variation of HBT´s at high junction temperature operating conditions

  • Author

    Marsh, S.P.

  • Author_Institution
    Marconi Mater. Technol. Ltd, Towcester, UK
  • Volume
    3
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    634
  • Abstract
    The thermal impedance and junction temperature of HBTs are derived using a new technique where the data points are obtained at the same junction temperature, avoiding linearity issues of β or Vbe . Results show that the thermal impedance varies with both ambient temperature and power dissipation at high junction temperature operating conditions
  • Keywords
    heterojunction bipolar transistors; high-temperature electronics; HBT; high temperature operation; junction temperature; power dissipation; thermal impedance; Current density; Failure analysis; Heterojunction bipolar transistors; Impedance; Linearity; MMICs; Materials science and technology; Power dissipation; Power system reliability; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1999 Asia Pacific
  • Print_ISBN
    0-7803-5761-2
  • Type

    conf

  • DOI
    10.1109/APMC.1999.833671
  • Filename
    833671
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1858035