Title :
Thermal impedance variation of HBT´s at high junction temperature operating conditions
Author_Institution :
Marconi Mater. Technol. Ltd, Towcester, UK
Abstract :
The thermal impedance and junction temperature of HBTs are derived using a new technique where the data points are obtained at the same junction temperature, avoiding linearity issues of β or Vbe . Results show that the thermal impedance varies with both ambient temperature and power dissipation at high junction temperature operating conditions
Keywords :
heterojunction bipolar transistors; high-temperature electronics; HBT; high temperature operation; junction temperature; power dissipation; thermal impedance; Current density; Failure analysis; Heterojunction bipolar transistors; Impedance; Linearity; MMICs; Materials science and technology; Power dissipation; Power system reliability; Temperature;
Conference_Titel :
Microwave Conference, 1999 Asia Pacific
Print_ISBN :
0-7803-5761-2
DOI :
10.1109/APMC.1999.833671
