DocumentCode
1858038
Title
A new integration technology platform: Integrated fan-out wafer-level-packaging for mobile applications
Author
Yu, Douglas
Author_Institution
Taiwan Semicond. Manuf. Co. R&D, Hsinchu, Taiwan
fYear
2015
fDate
16-18 June 2015
Abstract
3D sub-system integration of logic and DRAM with TSV is desirable for wide memory bandwidth and reduced power for mobile applications. However, its manufacturing cost, along with testing and heat dissipation, remains to be outstanding issues. A new integration technology platform, InFO, is proposed to address it. In this paper, we compare three main 3D integration architectures: InFO_PoP, FC_PoP and 3DIC with TSV based on mobile product requirements, including system power- performance-profile (form factor), heat dissipation, memory bandwidth and production cycle-time along with cost. InFO not only best optimizes and achieves the requirements, but also more readily integrates partitioned-chips, which further impacts on the manufacturing of the logic/DRAM sub-system.
Keywords
wafer level packaging; 3DIC; DRAM; FC_PoP; InFO_PoP; TSV; heat dissipation; integrated fan-out wafer-level-packaging; integration technology platform; memory bandwidth; mobile applications; mobile product requirements; production cycle-time; system power-performance-profile; Bandwidth; Heating; Junctions; Mobile communication; Substrates; System-on-chip; Three-dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSI Technology), 2015 Symposium on
Conference_Location
Kyoto
ISSN
0743-1562
Type
conf
DOI
10.1109/VLSIT.2015.7223697
Filename
7223697
Link To Document