DocumentCode :
1858038
Title :
A new integration technology platform: Integrated fan-out wafer-level-packaging for mobile applications
Author :
Yu, Douglas
Author_Institution :
Taiwan Semicond. Manuf. Co. R&D, Hsinchu, Taiwan
fYear :
2015
fDate :
16-18 June 2015
Abstract :
3D sub-system integration of logic and DRAM with TSV is desirable for wide memory bandwidth and reduced power for mobile applications. However, its manufacturing cost, along with testing and heat dissipation, remains to be outstanding issues. A new integration technology platform, InFO, is proposed to address it. In this paper, we compare three main 3D integration architectures: InFO_PoP, FC_PoP and 3DIC with TSV based on mobile product requirements, including system power- performance-profile (form factor), heat dissipation, memory bandwidth and production cycle-time along with cost. InFO not only best optimizes and achieves the requirements, but also more readily integrates partitioned-chips, which further impacts on the manufacturing of the logic/DRAM sub-system.
Keywords :
wafer level packaging; 3DIC; DRAM; FC_PoP; InFO_PoP; TSV; heat dissipation; integrated fan-out wafer-level-packaging; integration technology platform; memory bandwidth; mobile applications; mobile product requirements; production cycle-time; system power-performance-profile; Bandwidth; Heating; Junctions; Mobile communication; Substrates; System-on-chip; Three-dimensional displays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSI Technology), 2015 Symposium on
Conference_Location :
Kyoto
ISSN :
0743-1562
Type :
conf
DOI :
10.1109/VLSIT.2015.7223697
Filename :
7223697
Link To Document :
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