• DocumentCode
    185804
  • Title

    Piezoresistive sensing in a strongly-coupled high Q Lamé mode silicon MEMS resonator-pair

  • Author

    Yuanjie Xu ; Haoshen Zhu ; Lee, J.E.-Y.

  • Author_Institution
    Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China
  • fYear
    2014
  • fDate
    19-22 May 2014
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    We present a 13 MHz strongly coupled bulk Lamé mode silicon MEMS resonator-pair with quality factor (Q) of 106 (i.e. f·Q product of 1.3×1013) in addition to a 28 dB increase in transduction by uniquely adapting the coupling spring as an integrated piezoresistor. Our device exploits and preserves the intrinsic high Q of the isochoric Lamé mode while also tapping into the high concentration of stress in the coupling spring as the pair of Lamé mode resonators is synchronized to resonate in phase. This concentration of stress along the coupling beam benefits the output transduction efficiency, which in turn results in enhancing overall transduction while preserving very high Q. Q of the device also remains stable with increasing bias current.
  • Keywords
    Q-factor; beams (structures); micromechanical resonators; piezoresistive devices; resistors; springs (mechanical); coupling beam benefits; coupling spring; piezoresistive sensing; piezoresistor; quality factor; strongly-coupled high Q Lamé mode silicon MEMS resonator-pair; Couplings; Current measurement; Micromechanical devices; Piezoresistance; Resonant frequency; Sensors; Stress; Lamé mode; mechanical coupling; motional transconductance; piezoresistance; quality factor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control Symposium (FCS), 2014 IEEE International
  • Conference_Location
    Taipei
  • Type

    conf

  • DOI
    10.1109/FCS.2014.6859868
  • Filename
    6859868