DocumentCode :
185804
Title :
Piezoresistive sensing in a strongly-coupled high Q Lamé mode silicon MEMS resonator-pair
Author :
Yuanjie Xu ; Haoshen Zhu ; Lee, J.E.-Y.
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China
fYear :
2014
fDate :
19-22 May 2014
Firstpage :
1
Lastpage :
5
Abstract :
We present a 13 MHz strongly coupled bulk Lamé mode silicon MEMS resonator-pair with quality factor (Q) of 106 (i.e. f·Q product of 1.3×1013) in addition to a 28 dB increase in transduction by uniquely adapting the coupling spring as an integrated piezoresistor. Our device exploits and preserves the intrinsic high Q of the isochoric Lamé mode while also tapping into the high concentration of stress in the coupling spring as the pair of Lamé mode resonators is synchronized to resonate in phase. This concentration of stress along the coupling beam benefits the output transduction efficiency, which in turn results in enhancing overall transduction while preserving very high Q. Q of the device also remains stable with increasing bias current.
Keywords :
Q-factor; beams (structures); micromechanical resonators; piezoresistive devices; resistors; springs (mechanical); coupling beam benefits; coupling spring; piezoresistive sensing; piezoresistor; quality factor; strongly-coupled high Q Lamé mode silicon MEMS resonator-pair; Couplings; Current measurement; Micromechanical devices; Piezoresistance; Resonant frequency; Sensors; Stress; Lamé mode; mechanical coupling; motional transconductance; piezoresistance; quality factor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium (FCS), 2014 IEEE International
Conference_Location :
Taipei
Type :
conf
DOI :
10.1109/FCS.2014.6859868
Filename :
6859868
Link To Document :
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