Repetitive switching using thyristors for high energy and high di/dt applications

Repetitive switching characteristics of an involute structure SCR and an anchor structure GTO without an amplifying gate are discussed. A brief summary of the results from single-shot experimental studies comparing the devices with and without the amplifying gate is presented. Results from the transient thermal modeling of these two devices are summarized briefly. The experimental arrangement for repetitive tests, device details, and the characterization procedures are discussed in detail. The devices were tested at an anode-cathode voltage of 1.5 kV. They successfully switched 8 kA, 10 μs-wide current pulses having a di/dt of about 10000 A/μs, at frequencies up to 400 Hz