GaAs FET large-signal model for high power amplifier

Author

Ma, J. ; Xiao, Q. ; Ooi, B.-L. ; Zhou, X.D. ; Chew, S.T.

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore

Volume

3

fYear

1999

fDate

1999

Firstpage

642

Abstract

A new large signal model of GaAs MESFET is proposed. A commercial packaged high power MESFET (Fujitsu FLC103WG) is adopted for the extraction. Both the hot and cold condition measurements and the pulsed I/V measurement are performed to derive the model. A simple single-stage class-AB amplifier is subsequently built so as to verify the derived model. The simulation and measurement results of the intermodulation distortion of this amplifier are compared

Keywords

III-V semiconductors; equivalent circuits; gallium arsenide; intermodulation distortion; microwave field effect transistors; microwave power amplifiers; microwave power transistors; power MESFET; semiconductor device measurement; semiconductor device models; Fujitsu FLC103WG; GaAs; GaAs MESFET; IMD; cold condition measurements; commercial packaged FET device; field effect transistor; high power MESFET; high power amplifier; hot condition measurements; intermodulation distortion; large-signal model; pulsed I/V measurement; single-stage class-AB amplifier; Distortion measurement; FETs; Gallium arsenide; High power amplifiers; Intermodulation distortion; MESFETs; Packaging; Performance evaluation; Pulse amplifiers; Pulse measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1999 Asia Pacific

Print_ISBN

0-7803-5761-2

Type

conf

DOI

10.1109/APMC.1999.833673

Filename

833673