High gain high power-added-efficiency self-aligned AlGaAs/GaAs HBTs suitable for wireless communication application

Author

Yang, Pan ; Beiping, Yan ; Halder, Subrata ; Hong, Wang ; Haiqun, Zheng ; Ing, Ng Geok

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore

Volume

3

fYear

1999

fDate

1999

Firstpage

646

Abstract

This paper reports an experimental investigation of the power performance of self-aligned AlGaAs-GaAs HBTs at frequency 2.5 GHz, which is of interest for wireless application. On-wafer power measurement on a 3 μm×15 μm single-emitter HBT exhibited a 18.2 dB power gain with 100 mW output power (power density of 6.7 W/mm) at 1 dB gain compression point with PAE of 61.4%. As compared to the re-aligned approach, the self-aligned device achieved a power gain improvement of about 2 dB on average

Keywords

III-V semiconductors; UHF bipolar transistors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; power bipolar transistors; 100 mW; 18.2 dB; 2.5 GHz; 61.4 percent; AlGaAs-GaAs; AlGaAs/GaAs HBTs; HBT power performance; high gain HBTs; high power-added-efficiency HBTs; onwafer power measurement; self-aligned device; single-emitter HBT; wireless communication application; Fabrication; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Microwave devices; Ohmic contacts; Power generation; Wet etching; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1999 Asia Pacific

Print_ISBN

0-7803-5761-2

Type

conf

DOI

10.1109/APMC.1999.833674

Filename

833674