DocumentCode
1858193
Title
InGaAs quantum dot lasers by selective area MOCVD growth
Author
Elarde, V.C. ; Cueva, G.R. ; Coleman, J.J.
Author_Institution
Illinois Univ., Urbana, IL, USA
fYear
2005
fDate
11-15 July 2005
Firstpage
390
Abstract
Quantum dot heterostructure lasers formed by a combination of electron beam lithography and selective area MOCVD growth are described. The quantum dot laser growth and fabrication process are presented and the observed 3-dimensional quantized spectral properties are outlined.
Keywords
III-V semiconductors; MOCVD; electron beam lithography; gallium arsenide; indium compounds; semiconductor lasers; semiconductor quantum dots; InGaAs; InGaAs quantum dot lasers growth; electron beam lithography; nanotechnology; quantum dot heterostructure lasers; quantum dot laser fabrication; selective area MOCVD growth; semiconductor lasers; Electron beams; Gallium arsenide; Indium gallium arsenide; Lithography; MOCVD; Quantum dot lasers; Quantum well lasers; Threshold current; US Department of Transportation; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN
0-7803-9199-3
Type
conf
DOI
10.1109/NANO.2005.1500778
Filename
1500778
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