Title :
Characterization of self-heating in high-mobility Ge FinFET pMOS devices
Author :
Bury, E. ; Kaczer, B. ; Mitard, J. ; Collaert, N. ; Khatami, N.S. ; Aksamija, Z. ; Vasileska, D. ; Raleva, K. ; Witters, L. ; Hellings, G. ; Linten, D. ; Groeseneken, G. ; Thean, A.
Author_Institution :
Dept. ESAT, KU Leuven, Leuven, Belgium
Abstract :
Based on physically-extended methodology, measurements and simulations show that implementing high-mobility materials and particularly alloys, such as a SiGe buffer for mobility enhancement in a Ge channel, can result in a 115% increase in self heating in the N7 node, compared to standard Si FinFETs.
Keywords :
Ge-Si alloys; MOSFET; carrier mobility; elemental semiconductors; germanium; heating; FinFET self-heating; Ge; SiGe; alloy materials; high mobility FinFET; mobility enhancement; pMOS device; Conductivity; FinFETs; Logic gates; Silicon; Silicon germanium; Temperature measurement; Thermal conductivity;
Conference_Titel :
VLSI Technology (VLSI Technology), 2015 Symposium on
Conference_Location :
Kyoto
DOI :
10.1109/VLSIT.2015.7223703
